Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12754036Application Date: 2010-04-05
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Publication No.: US08497557B2Publication Date: 2013-07-30
- Inventor: Masaya Tanaka , Tetsuo Fujii , Hisanori Yokura
- Applicant: Masaya Tanaka , Tetsuo Fujii , Hisanori Yokura
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2009-91793 20090406; JP2010-53399 20100310
- Main IPC: H01L29/84
- IPC: H01L29/84

Abstract:
A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.
Public/Granted literature
- US20100252898A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-10-07
Information query
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