Invention Grant
US08498160B2 Nonvolatile memory device and related programming method using selective bit line precharging
有权
非易失性存储器件和使用选择性位线预充电的相关编程方法
- Patent Title: Nonvolatile memory device and related programming method using selective bit line precharging
- Patent Title (中): 非易失性存储器件和使用选择性位线预充电的相关编程方法
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Application No.: US12793007Application Date: 2010-06-03
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Publication No.: US08498160B2Publication Date: 2013-07-30
- Inventor: Bo Geun Kim , Ki tae Park
- Applicant: Bo Geun Kim , Ki tae Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0094376 20091005
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method of programming a nonvolatile memory device comprises programming memory cells by performing a plurality of program loops with bitline precharging inactivated during program verification operations of some of the program loops, and with bitline precharging activated during program verification operations of some of the program loops.
Public/Granted literature
- US20110080791A1 NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION Public/Granted day:2011-04-07
Information query
