发明授权
- 专利标题: Pixel structure and method of fabricating the same
- 专利标题(中): 像素结构及其制造方法
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申请号: US13369272申请日: 2012-02-08
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公开(公告)号: US08501552B2公开(公告)日: 2013-08-06
- 发明人: Chin-Tzu Kao , Yu-Tsung Lee
- 申请人: Chin-Tzu Kao , Yu-Tsung Lee
- 申请人地址: TW Taoyuan
- 专利权人: Chunghwa Picture Tubes, Ltd.
- 当前专利权人: Chunghwa Picture Tubes, Ltd.
- 当前专利权人地址: TW Taoyuan
- 代理商 Winston Hsu; Scott Margo
- 优先权: TW100141761A 20111116
- 主分类号: H01L21/84
- IPC分类号: H01L21/84
摘要:
A pixel structure includes a substrate; a scan line; a gate electrode; an insulating layer disposed on the scan line, the gate electrode and the substrate; a channel and a data line disposed on the insulating layer; a source electrode and a drain electrode disposed on the channel; a passivation layer; a pixel electrode and a connecting electrode. The data line does not overlap the scan line. The passivation layer disposed on the source electrode and the drain electrode includes a first contact hole partially exposing the drain electrode, and a plurality of second contact holes partially exposing the data line or the scan line. The pixel electrode disposed on the passivation layer is electrically connected to the drain electrode through the first contact hole. Furthermore, the connecting electrode disposed on the passivation layer is electrically connected to the data line or the scan line through the second contact holes.
公开/授权文献
- US20130119385A1 PIXEL STRUCTURE AND METHOD OF FABRICATING THE SAME 公开/授权日:2013-05-16
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