发明授权
- 专利标题： Method of manufacturing source/drain structures
- 专利标题（中）： 制造源/漏结构的方法
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申请号： US12981610申请日： 2010-12-30
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公开(公告)号： US08501570B2公开(公告)日： 2013-08-06
- 发明人: Ziwei Fang , Jeff J. Xu , Ming-Jie Huang , Yimin Huang , Zhiqiang Wu , Min Cao
- 申请人： Ziwei Fang , Jeff J. Xu , Ming-Jie Huang , Yimin Huang , Zhiqiang Wu , Min Cao
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/306 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L21/265
摘要：
An integrated circuit device and method for manufacturing the integrated circuit device provide improved control over a shape of a trench for forming the source and drain features of integrated circuit device, by forming a second doped region in a first doped region and removing the first and the second doped regions by a first and a second wet etching processes.
公开/授权文献
- US20120100681A1 METHOD OF MANUFACTURING SOURCE/DRAIN STRUCTURES 公开/授权日：2012-04-26
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