Invention Grant
- Patent Title: Method for fabricating a micro-electronic device equipped with semi-conductor zones on an insulator with a horizontal GE concentration gradient
- Patent Title (中): 用于制造具有水平GE浓度梯度的绝缘体上具有半导体区的微电子器件的方法
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Application No.: US12560867Application Date: 2009-09-16
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Publication No.: US08501596B2Publication Date: 2013-08-06
- Inventor: Benjamin Vincent , Vincent Destefanis
- Applicant: Benjamin Vincent , Vincent Destefanis
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atmoique
- Current Assignee: Commissariat a l'Energie Atmoique
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0856303 20080918
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A manufacturing method of a microelectronic device including at least one semi-conductor zone which rests on a support and which exhibits a germanium concentration gradient in a direction parallel to the principal pane of the support.
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