发明授权
US08501601B2 Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy
有权
通过沟道半导体合金的合金种类的不对称浓度分布来驱动场效应晶体管的电流增加
- 专利标题： Drive current increase in field effect transistors by asymmetric concentration profile of alloy species of a channel semiconductor alloy
- 专利标题（中）： 通过沟道半导体合金的合金种类的不对称浓度分布来驱动场效应晶体管的电流增加
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申请号： US13239672申请日： 2011-09-22
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公开(公告)号： US08501601B2公开(公告)日： 2013-08-06
- 发明人: Stefan Flachowsky , Thilo Scheiper , Steven Langdon , Jan Hoentschel
- 申请人： Stefan Flachowsky , Thilo Scheiper , Steven Langdon , Jan Hoentschel
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Williams, Morgan & Amerson, P.C.
- 优先权： DE102011003439 20110201
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
When forming sophisticated transistors, the channel region may be provided such that the gradient of the band gap energy of the channel material may result in superior charge carrier velocity. For example, a gradient in concentration of germanium, carbon and the like may be implemented along the channel length direction, thereby obtaining higher transistor performance.
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