发明授权
- 专利标题： Semiconductor device with improved on-resistance
- 专利标题（中）： 具有改善的导通电阻的半导体器件
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申请号： US13463243申请日： 2012-05-03
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公开(公告)号： US08502315B2公开(公告)日： 2013-08-06
- 发明人: Anton Mauder , Rudolf Berger , Franz Hirler , Ralf Siemieniec , Hans-Joachim Schulze
- 申请人： Anton Mauder , Rudolf Berger , Franz Hirler , Ralf Siemieniec , Hans-Joachim Schulze
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a source, a drain, and a gate configured to selectively enable a current to pass between the source and the drain. The semiconductor device includes a drift zone between the source and the drain and a first field plate adjacent the drift zone. The semiconductor device includes a dielectric layer electrically isolating the first field plate from the drift zone and charges within the dielectric layer close to an interface of the dielectric layer adjacent the drift zone.
公开/授权文献
- US20120217580A1 SEMICONDUCTOR DEVICE WITH IMPROVED ON-RESISTANCE 公开/授权日：2012-08-30
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