发明授权
US08503247B2 Semiconductor storage apparatus, and method and system for boosting word lines
有权
半导体存储装置以及用于增强字线的方法和系统
- 专利标题： Semiconductor storage apparatus, and method and system for boosting word lines
- 专利标题（中）： 半导体存储装置以及用于增强字线的方法和系统
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申请号： US12826054申请日： 2010-06-29
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公开(公告)号： US08503247B2公开(公告)日： 2013-08-06
- 发明人: Hiroshi Yoshioka
- 申请人： Hiroshi Yoshioka
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Arent Fox LLP
- 优先权： JP2009-183251 20090806
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A semiconductor storage apparatus includes: a word line coupled to a cell transistor; a first capacitor having a first end coupled to the word line; a boost driver coupled to a second end of the first capacitor; a voltage-drop circuit configured to generate a given voltage drop between a first voltage and a second voltage; and a boost-drive circuit configured to boost a voltage at the second end from the second voltage to the first voltage.
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