发明授权
- 专利标题: Method for lift-off of light-emitting diode substrate
- 专利标题(中): 发光二极管基板剥离方法
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申请号: US13352812申请日: 2012-01-18
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公开(公告)号: US08507357B2公开(公告)日: 2013-08-13
- 发明人: Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Jiansen Zheng , Jyh-Chiarng Wu , Keehuang Lin
- 申请人: Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Jiansen Zheng , Jyh-Chiarng Wu , Keehuang Lin
- 申请人地址: CN Xiamen
- 专利权人: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- 当前专利权人: Xiamen Sanan Optoelectronics Technology Co., Ltd.
- 当前专利权人地址: CN Xiamen
- 代理机构: Fulbright & Jaworski LLP
- 优先权: CN201110024096 20110121
- 主分类号: H01L21/0242
- IPC分类号: H01L21/0242
摘要:
The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency.
公开/授权文献
- US20120190148A1 METHOD FOR LIFT-OFF OF LIGHT-EMITTING DIODE SUBSTRATE 公开/授权日:2012-07-26