In a magnetic memory which employs applied spin torque magnetization reversal and does not require the switching of the current direction at the time of rewrite, a memory cell includes a stack of a ferromagnetic fixed layer, a nonmagnetic layer, a ferromagnetic recording layer, a nonmagnetic layer, and a ferromagnetic magnetization rotation assist layer. Recording is performed by making the recording layer magnetization direction parallel or antiparallel to the fixed layer magnetization direction. The magnetization directions of the fixed, recording and assist layers are oriented in in-plane directions of the respective magnetic layers, and the magnetization directions of the assist and fixed layers are at 90 degrees. Write current flows from the fixed to the recording layer where the recording layer magnetization direction is rewritten from parallel to antiparallel of the fixed layer magnetization direction and where the recording layer magnetization direction is rewritten from antiparallel to parallel direction.