发明授权
US08508990B2 Non-volatile memory device, operation method thereof, and devices having the non-volatile memory device
有权
非易失性存储器件，其操作方法以及具有非易失性存储器件的器件
- 专利标题： Non-volatile memory device, operation method thereof, and devices having the non-volatile memory device
- 专利标题（中）： 非易失性存储器件，其操作方法以及具有非易失性存储器件的器件
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申请号： US13071727申请日： 2011-03-25
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公开(公告)号： US08508990B2公开(公告)日： 2013-08-13
- 发明人: Kyoung Lae Cho , Hyuck-Sun Kwon , Jun Jin Kong
- 申请人： Kyoung Lae Cho , Hyuck-Sun Kwon , Jun Jin Kong
- 申请人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- 代理机构： Muir Patent Consulting, PLLC
- 优先权： KR10-2010-0032242 20100408
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A non-volatile memory device includes a memory cell array including a plurality of multi-level cells each storing data corresponding to one of a plurality of states of a first group of states, and a control circuit. The control circuit is configured to program data corresponding to one of the plurality of states in a first multi-level cell according to a first verify voltage level of a first group of verify voltage levels, and to control the first multi-level cell to be re-programmed to one of a plurality of states of a second group of states according to a first verify voltage level of a second group of verify voltage levels. Each voltage level of the second group of verify voltage levels has a higher level than the verify voltage levels of the first group of verify voltage levels.