Invention Grant
US08508993B2 Method and apparatus of performing an erase operation on a memory integrated circuit 有权
在存储器集成电路上执行擦除操作的方法和装置

Method and apparatus of performing an erase operation on a memory integrated circuit
Abstract:
Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line.
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