Invention Grant
- Patent Title: Method of programming non-volatile memory device and non-volatile memory device using the same
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Application No.: US12461934Application Date: 2009-08-28
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Publication No.: US08508996B2Publication Date: 2013-08-13
- Inventor: Moosung Kim , Ohsuk Kwon
- Applicant: Moosung Kim , Ohsuk Kwon
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0103198 20081021
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.
Public/Granted literature
- US20100097863A1 Method of programming non-volatile memory device and non-volatile memory device using the same Public/Granted day:2010-04-22
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