Invention Grant
US08509023B2 Method and system for split threshold voltage programmable bitcells
失效
分离阈值电压可编程位单元的方法和系统
- Patent Title: Method and system for split threshold voltage programmable bitcells
- Patent Title (中): 分离阈值电压可编程位单元的方法和系统
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Application No.: US13446584Application Date: 2012-04-13
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Publication No.: US08509023B2Publication Date: 2013-08-13
- Inventor: Jonathan Schmitt
- Applicant: Jonathan Schmitt
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: G11C17/16
- IPC: G11C17/16
Abstract:
A memory device includes an antifuse. The antifuse is configured to program a bit cell of the memory device. The antifuse is configured with a PMOS device.
Public/Granted literature
- US20120195091A1 Method and System for Split Threshold Voltage Programmable Bitcells Public/Granted day:2012-08-02
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