发明授权
- 专利标题: Method and apparatuses for customizable error correction of memory
- 专利标题(中): 存储器可定制错误校正的方法和装置
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申请号: US12617661申请日: 2009-11-12
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公开(公告)号: US08510628B2公开(公告)日: 2013-08-13
- 发明人: Ferdinando Bedeschi , Paolo Amato , Roberto Gastaldi
- 申请人: Ferdinando Bedeschi , Paolo Amato , Roberto Gastaldi
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman, Lundberg & Woessner, P.A.
- 主分类号: G11C29/00
- IPC分类号: G11C29/00
摘要:
Described herein are a method and apparatuses for providing customizable error correction for memory arrays. In one embodiment, an apparatus includes a memory device having a memory array to store data and an analog to digital sense unit coupled to the memory array. The analog to digital sense unit senses analog signals associated with the memory array and converts the analog signals into distributions of digital values. An error-correcting code (ECC) unit receives the distributions of digital values from the analog to digital sense unit. A configurable non-volatile look-up table generates ECC parameters including error probability data and provides the ECC parameters to the ECC unit for error correction. The error probability data has error probability values that are associated with the distributions of digital values. The ECC unit executes an ECC algorithm to provide error correction using the error probability data.
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