Methods of forming phase-changeable memory devices including an adiabatic layer

Invention Grant

US08513051B2 Methods of forming phase-changeable memory devices including an adiabatic layer 有权

Title translation: 形成包括绝热层的相变存储器件的方法

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Patent Title: Methods of forming phase-changeable memory devices including an adiabatic layer
Patent Title (中): 形成包括绝热层的相变存储器件的方法
Application No.: US12708742

Application Date: 2010-02-19
Publication No.: US08513051B2

Publication Date: 2013-08-20
Inventor: Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
Applicant: Yong-Ho Ha , Bong-Jin Kuh , Ji-Hye Yi , Jun-Soo Bae
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec
Priority: KR2004-64844 20040817
Main IPC: H01L21/8239
IPC: H01L21/8239

Methods of forming phase-changeable memory devices including an adiabatic layer

Abstract:

Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.

Abstract(Chinese):

相变存储器件包括电连接到衬底中的晶体管的杂质区的下电极和在下电极上包括第一相变材料的编程层图案。包含具有比第一相变材料低的热导率的材料的绝热层图案在编程层图案上，上电极在绝热层图案上。

Public/Granted literature

US20100144087A1 METHODS OF FORMING PHASE-CHANGEABLE MEMORY DEVICES INCLUDING AN ADIABATIC LAYER Public/Granted day:2010-06-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构