发明授权
- 专利标题: TFT SAS memory cell structures
- 专利标题(中): TFT SAS存储单元结构
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申请号: US12259144申请日: 2008-10-27
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公开(公告)号: US08513079B2公开(公告)日: 2013-08-20
- 发明人: Fumitake Mieno
- 申请人: Fumitake Mieno
- 申请人地址: CN Shanghai CN Beijing
- 专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人: Semiconductor Manufacturing International (Shanghai) Corporation,Semiconductor Manufacturing International (Beijing) Corporation
- 当前专利权人地址: CN Shanghai CN Beijing
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: CN200810040293 20080703
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A device having thin-film transistor (TFT) silicon-aluminum oxide-silicon (SAS) memory cell structures is provided. The device includes a substrate, a dielectric layer on the substrate, and one or more source or drain regions being embedded in the dielectric layer. the dielectric layer being associated with a first surface. Each of the one or more source or drain regions includes an N+ polysilicon layer on a diffusion barrier layer which is on a conductive layer. The N+ polysilicon layer has a second surface substantially co-planar with the first surface. Additionally, the device includes a P− polysilicon layer overlying the co-planar surface, an aluminum oxide layer overlying the P− polysilicon layer; and at least one control gate overlying the aluminum oxide layer. In a specific embodiment, the control gate is made of highly doped P+ polysilicon. A method for making the TFT SAS memory cell structure is provided and can be repeated to integrate the structure three-dimensionally.
公开/授权文献
- US20100001281A1 TFT SAS MEMORY CELL STRUCTURES 公开/授权日:2010-01-07