发明授权
- 专利标题: Dual resistance heater for phase change devices and manufacturing method thereof
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申请号: US12980141申请日: 2010-12-28
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公开(公告)号: US08513576B2公开(公告)日: 2013-08-20
- 发明人: Yudong Kim , Ilya V. Karpov , Charles C. Kuo , Greg Atwood , Maria Santina Marangon , Tyler Lowrey
- 申请人: Yudong Kim , Ilya V. Karpov , Charles C. Kuo , Greg Atwood , Maria Santina Marangon , Tyler Lowrey
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman, Lundberg & Woessner, P.A.
- 优先权: EP04107070 20041230
- 主分类号: H05B1/02
- IPC分类号: H05B1/02 ; B23K9/00 ; G11C11/00 ; H01L29/04 ; H01C7/06 ; H01C7/00
摘要:
A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.