Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12873788Application Date: 2010-09-01
-
Publication No.: US08513715B2Publication Date: 2013-08-20
- Inventor: Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
- Applicant: Kazuhide Abe , Tadahiro Sasaki , Atsuko Iida , Kazuhiko Itaya
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-052592 20100310
- Main IPC: H01L29/78
- IPC: H01L29/78

Abstract:
According to an embodiment, the present invention provides a semiconductor device that is easily integrated with other electronic circuits and functions as an oscillator with high frequency accuracy. The semiconductor device includes: a semiconductor substrate; an element region; an element isolation region that surrounds the element region; a field effect transistor including a gate electrode that is formed on the element region, source and drain regions, and a channel region that is interposed between the source region and the drain region; gate, source, and drain terminals that are used to apply a voltage to the gate electrode, the source region, and the drain region, respectively; and an output terminal that is electrically connected to the channel region. When the threshold voltage of the field effect transistor is Vth, a gate voltage Vgs applied between the source terminal and the gate terminal and a drain voltage Vds applied between the source terminal and the drain terminal satisfy the following relationship: Vth
Public/Granted literature
- US20110220974A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
Information query
IPC分类: