Invention Grant
- Patent Title: Vertical type semiconductor device
- Patent Title (中): 垂直型半导体器件
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Application No.: US12588491Application Date: 2009-10-16
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Publication No.: US08513731B2Publication Date: 2013-08-20
- Inventor: Seung-Jun Lee , Woonkyung Lee
- Applicant: Seung-Jun Lee , Woonkyung Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0111394 20081111
- Main IPC: H01L29/66
- IPC: H01L29/66

Abstract:
A vertical type semiconductor device including a first vertical semiconductor device on a semiconductor substrate, a second vertical semiconductor device on the first vertical semiconductor device, and an interconnection between the first and second vertical semiconductor devices.
Public/Granted literature
- US20100117143A1 Vertical type semiconductor device Public/Granted day:2010-05-13
Information query
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