发明授权
US08513749B2 Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
有权
复合硬掩模结构和创建用于自旋扭矩驱动磁隧道结的不均匀电流路径的方法
- 专利标题： Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junction
- 专利标题（中）： 复合硬掩模结构和创建用于自旋扭矩驱动磁隧道结的不均匀电流路径的方法
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申请号： US12687426申请日： 2010-01-14
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公开(公告)号： US08513749B2公开(公告)日： 2013-08-20
- 发明人: Wei-Chuan Chen , Seung H. Kang , Xiaochun Zhu
- 申请人： Wei-Chuan Chen , Seung H. Kang , Xiaochun Zhu
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A magnetic tunnel junction (MTJ) storage element and method of forming the MTJ are disclosed. The magnetic tunnel junction (MTJ) storage element includes a pinned layer, a barrier layer, a free layer and a composite hardmask or top electrode. The composite hardmask/top electrode architecture is configured to provide a non-uniform current path through the MTJ storage element and is formed from electrodes having different resistance characteristics coupled in parallel. An optional tuning layer interposed between the free layer and the top electrode helps to reduce the damping constant of the free layer.
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