发明授权
- 专利标题: System and method for lithography simulation
- 专利标题(中): 光刻模拟系统和方法
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申请号: US13533942申请日: 2012-06-26
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公开(公告)号: US08516405B2公开(公告)日: 2013-08-20
- 发明人: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- 申请人: Jun Ye , Yen-Wen Lu , Yu Cao , Luoqi Chen , Xun Chen
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50 ; G06F19/00 ; G21K5/00 ; G03F1/00
摘要:
In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
公开/授权文献
- US20120269421A1 System and Method for Lithography Simulation 公开/授权日:2012-10-25
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