Invention Grant
- Patent Title: Resistive memory device and method for fabricating the same
- Patent Title (中): 电阻式存储器件及其制造方法
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Application No.: US12979922Application Date: 2010-12-28
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Publication No.: US08519374B2Publication Date: 2013-08-27
- Inventor: Seok-Pyo Song , Yu-Jin Lee
- Applicant: Seok-Pyo Song , Yu-Jin Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0005549 20100121
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/41
Abstract:
A resistive memory device includes a lower electrode formed on a substrate, a resistive layer formed on the lower electrode, and an upper electrode on the resistive layer, wherein a lower portion of the upper electrode is narrower than an upper portion of the upper electrode.
Public/Granted literature
- US20110175051A1 RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2011-07-21
Information query
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