发明授权
- 专利标题: Thin film transistor array panel and manufacturing method thereof
- 专利标题(中): 薄膜晶体管阵列面板及其制造方法
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申请号: US12823043申请日: 2010-06-24
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公开(公告)号: US08519393B2公开(公告)日: 2013-08-27
- 发明人: Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
- 申请人: Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
- 申请人地址: KR
- 专利权人: Samsung Display Co., Ltd.
- 当前专利权人: Samsung Display Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2009-0122378 20091210
- 主分类号: H01L27/146
- IPC分类号: H01L27/146 ; H01L29/786
摘要:
A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.