Invention Grant
US08519405B2 Thin film transistor, organic light emitting diode (OLED) display including the same, and manufacturing methods of them
有权
薄膜晶体管,有机发光二极管(OLED)显示器包括它们及其制造方法
- Patent Title: Thin film transistor, organic light emitting diode (OLED) display including the same, and manufacturing methods of them
- Patent Title (中): 薄膜晶体管,有机发光二极管(OLED)显示器包括它们及其制造方法
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Application No.: US13102234Application Date: 2011-05-06
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Publication No.: US08519405B2Publication Date: 2013-08-27
- Inventor: Ji-Su Ahn , Kwang-Nam Kim , Jae-Yong Lee , Beong-Ju Kim , In-Young Jung
- Applicant: Ji-Su Ahn , Kwang-Nam Kim , Jae-Yong Lee , Beong-Ju Kim , In-Young Jung
- Applicant Address: KR Giheung-Gu, Yongin, Gyeonggi-do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyeonggi-do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2010-0103072 20101021
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
The present invention relates generally to a thin film transistor, an organic light emitting diode (OLED) display including the same, and manufacturing methods of them. The thin film transistor comprises: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; an inter layer dielectric disposed on the entire surface of the substrate; and source and drain electrodes disposed on the inter layer dielectric and connected to the semiconductor layer, and in which the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer, and a manufacturing method thereof. The organic light emitting diode (OLED) display comprises the elements of the thin film transistor described above, and also includes an insulating film disposed on the entire surface of the substrate, and a first electrode, an organic layer, and a second electrode disposed on the insulating film, the first electrode being electrically connected to any one of the source and drain electrodes, and the gate electrode is disposed so as to correspond to the entire surface of the semiconductor layer.
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