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US08519414B2 III-nitride based semiconductor structure with multiple conductive tunneling layer 有权
具有多个导电隧穿层的III族氮化物基半导体结构

III-nitride based semiconductor structure with multiple conductive tunneling layer
摘要：
A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.
摘要（中）：

半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。

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