- 专利标题: Substrate dividing method
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申请号: US13618699申请日: 2012-09-14
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公开(公告)号: US08519511B2公开(公告)日: 2013-08-27
- 发明人: Yoshimaro Fujii , Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama
- 申请人: Yoshimaro Fujii , Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JPP2002-067289 20020312
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
公开/授权文献
- US20130009284A1 SUBSTRATE DIVIDING METHOD 公开/授权日:2013-01-10
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