发明授权
- 专利标题： Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same
- 专利标题（中）： 用于形成有无空隙的金属层的半导体器件的金属线及其形成方法
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申请号： US13238570申请日： 2011-09-21
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公开(公告)号： US08519539B2公开(公告)日： 2013-08-27
- 发明人: Dong Ha Jung , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Sun Woo Hwang , Jeong Tae Kim
- 申请人： Dong Ha Jung , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Sun Woo Hwang , Jeong Tae Kim
- 申请人地址： KR Kyoungki-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Kyoungki-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2006-0137200 20061228
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.
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