发明授权
- 专利标题： Piezoelectric thin film element and piezoelectric thin film device using a piezoelectric thin film of alkali-niobium oxide series
- 专利标题（中）： 压电薄膜元件和使用碱铌氧化物系列的压电薄膜的压电薄膜器件
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申请号： US13006842申请日： 2011-01-14
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公开(公告)号： US08519602B2公开(公告)日： 2013-08-27
- 发明人: Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
- 申请人： Kenji Shibata , Kazufumi Suenaga , Akira Nomoto , Kazutoshi Watanabe
- 申请人地址： JP Tokyo
- 专利权人： Hitachi Cable, Ltd.
- 当前专利权人： Hitachi Cable, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Fleit Gibbons Gutman Bongini Bianco PL
- 代理商 Marty Fleit; Paul D. Bianco
- 优先权： JP2010-007942 20100118
- 主分类号： H01L41/187
- IPC分类号： H01L41/187
摘要：
To provide a piezoelectric thin film on a substrate, having an alkali-niobium oxide-based perovskite structure expressed by a composition formula (K1-xNax)yNbO3, wherein the composition ratio x of the piezoelectric thin film expressed by (K1-xNax)yNbO3 is in a range of 0.4≦x≦0.7, and a half width of a rocking curve of (001) plane by X-ray diffraction measurement is in a range of 0.5° or more and 2.5° or less.
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