Invention Grant
- Patent Title: Parallax barrier device and fabricating method thereof
- Patent Title (中): 视差屏障装置及其制造方法
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Application No.: US13335943Application Date: 2011-12-23
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Publication No.: US08520287B2Publication Date: 2013-08-27
- Inventor: Jian-Hong Lee , Jih-Fon Huang , Yi-Wen Chung
- Applicant: Jian-Hong Lee , Jih-Fon Huang , Yi-Wen Chung
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW99146382A 20101228; TW100135762A 20111003
- Main IPC: G02F1/153
- IPC: G02F1/153 ; G09G3/38

Abstract:
A parallax barrier device includes: a first substrate; a first patterned transparent electrode layer disposed on the first substrate; a first patterned electrochromic material layer disposed on the first patterned transparent electrode layer and including a plurality of electrochromic structures, in which lengths, widths or diameters of the electrochromic structures are 50 nm to 500 nm, and included angles of the electrochromic structures and a surface of the first substrate to be deposited are 30° to 89°; a second substrate; a second patterned transparent electrode layer disposed on the second substrate; a second patterned electrochromic material layer disposed on the second patterned transparent electrode layer; and an electrolyte disposed between the first patterned electrochromic material layer and the second patterned electrochromic material layer.
Public/Granted literature
- US20120162744A1 PARALLAX BARRIER DEVICE AND FABRICATING METHOD THEREOF Public/Granted day:2012-06-28
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