发明授权
- 专利标题： Wafer processing method
- 专利标题（中）： 晶圆加工方法
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申请号： US13451283申请日： 2012-04-19
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公开(公告)号： US08524576B2公开(公告)日： 2013-09-03
- 发明人: Seiji Harada , Yoshikazu Kobayashi
- 申请人： Seiji Harada , Yoshikazu Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： Disco Corporation
- 当前专利权人： Disco Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Greer, Burns & Crain, Ltd.
- 优先权： JP2011-107001 20110512
- 主分类号： H01L21/46
- IPC分类号： H01L21/46
摘要：
In a wafer processing method, the back side of a wafer having a plurality of devices on the front side thereof is ground, thereby reducing the thickness of the wafer to a predetermined thickness. The back side of the wafer is polished after performing the back grinding step, thereby removing a grinding strain, and a silicon nitride film is formed on the back side of the wafer. The thickness of the silicon nitride film to be formed in the silicon nitride film forming step is set to 6 to 100 nm. Thus, the silicon nitride film having a thickness of 6 to 100 nm is formed on the polished back side of the wafer from which a grinding strain has been removed. Accordingly, each device constituting the wafer can ensure a sufficient die strength and a sufficient gettering effect.
公开/授权文献
- US20120289060A1 WAFER PROCESSING METHOD 公开/授权日：2012-11-15
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