发明授权
US08524614B2 III-V compound semiconductor material passivation with crystalline interlayer
有权
III-V化合物半导体材料钝化与晶体中间层
- 专利标题： III-V compound semiconductor material passivation with crystalline interlayer
- 专利标题（中）： III-V化合物半导体材料钝化与晶体中间层
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申请号： US12955203申请日： 2010-11-29
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公开(公告)号： US08524614B2公开(公告)日： 2013-09-03
- 发明人: Kuen-Ting Shiu , Dechao Guo , Shu-Jen Han , Edward W. Kiewra , Masaharu Kobayashi
- 申请人： Kuen-Ting Shiu , Dechao Guo , Shu-Jen Han , Edward W. Kiewra , Masaharu Kobayashi
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
The present disclosure reduces and, in some instances, eliminates the density of interface states in III-V compound semiconductor materials by providing a thin crystalline interlayer onto an upper surface of a single crystal III-V compound semiconductor material layer to protect the crystallinity of the single crystal III-V compound semiconductor material layer's surface atoms prior to further processing of the structure.
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