发明授权
- 专利标题： Methods for manufacturing dielectric films
- 专利标题（中）： 电介质膜的制造方法
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申请号： US13147990申请日： 2010-02-26
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公开(公告)号： US08524617B2公开(公告)日： 2013-09-03
- 发明人: Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
- 申请人： Takashi Nakagawa , Naomu Kitano , Toru Tatsumi
- 申请人地址： JP Kawasaki-shi
- 专利权人： Canon Anelva Corporation
- 当前专利权人： Canon Anelva Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2009-044986 20090227
- 国际申请： PCT/JP2010/001304 WO 20100226
- 国际公布： WO2010/098121 WO 20100902
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469
摘要：
A method for manufacturing a dielectric film having a high dielectric constant is provided.The method is a method for forming, on a substrate, a dielectric film including a metal oxide containing O and elements A and B, wherein the element A comprises Hf or a mixture of Hf and Zr and the element B comprises Al or Si, which includes the steps of: forming a metal oxide having an amorphous structure which has a molar ratio between element A and element B, B/(A+B) of 0.02≦(B/(A+B))≦0.095 and a molar ratio between element A and O, O/A of 1.0
公开/授权文献
- US20120021612A1 METHODS FOR MANUFACTURING DIELECTRIC FILMS 公开/授权日：2012-01-26