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US08525156B2 Organic thin film transistor having an amorphous channel control layer with specified inozation potential 有权
有机薄膜晶体管,具有具有特定掺杂电位的无定形沟道控制层

Organic thin film transistor having an amorphous channel control layer with specified inozation potential
摘要:
An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
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