发明授权
US08525156B2 Organic thin film transistor having an amorphous channel control layer with specified inozation potential
有权
有机薄膜晶体管,具有具有特定掺杂电位的无定形沟道控制层
- 专利标题: Organic thin film transistor having an amorphous channel control layer with specified inozation potential
- 专利标题(中): 有机薄膜晶体管,具有具有特定掺杂电位的无定形沟道控制层
-
申请号: US12679634申请日: 2008-09-09
-
公开(公告)号: US08525156B2公开(公告)日: 2013-09-03
- 发明人: Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
- 申请人: Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
- 申请人地址: JP Tokyo
- 专利权人: Idemitsu Kosan Co., Ltd.
- 当前专利权人: Idemitsu Kosan Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Millen, White, Zelano & Branigan, P.C.
- 优先权: JP2007-249132 20070926; JP2008-196278 20080730
- 国际申请: PCT/JP2008/066248 WO 20080909
- 国际公布: WO2009/041254 WO 20090402
- 主分类号: H01L51/30
- IPC分类号: H01L51/30
摘要:
An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
公开/授权文献
- US20100283041A1 ORGANIC THIN FILM TRANSISTOR 公开/授权日:2010-11-11
信息查询
IPC分类: