发明授权
US08525181B2 Thin-film transistor array substrate, organic light-emitting display device comprising the thin-film transistor array substrate, and method of manufacturing the thin-film transistor array substrate 有权
薄膜晶体管阵列基板,包括该薄膜晶体管阵列基板的有机发光显示装置及其制造薄膜晶体管阵列基板的方法

  • 专利标题: Thin-film transistor array substrate, organic light-emitting display device comprising the thin-film transistor array substrate, and method of manufacturing the thin-film transistor array substrate
  • 专利标题(中): 薄膜晶体管阵列基板,包括该薄膜晶体管阵列基板的有机发光显示装置及其制造薄膜晶体管阵列基板的方法
  • 申请号: US13340800
    申请日: 2011-12-30
  • 公开(公告)号: US08525181B2
    公开(公告)日: 2013-09-03
  • 发明人: Sung Ho KimMin-Chul Shin
  • 申请人: Sung Ho KimMin-Chul Shin
  • 申请人地址: KR Yongin, Gyeonggi-Do
  • 专利权人: Samsung Display Co., Ltd.
  • 当前专利权人: Samsung Display Co., Ltd.
  • 当前专利权人地址: KR Yongin, Gyeonggi-Do
  • 代理机构: Lee & Morse, P.C.
  • 优先权: KR10-2011-0077846 20110804
  • 主分类号: H01L27/14
  • IPC分类号: H01L27/14 H01L21/00 G02F1/1343
Thin-film transistor array substrate, organic light-emitting display device comprising the thin-film transistor array substrate, and method of manufacturing the thin-film transistor array substrate
摘要:
A thin-film transistor (TFT) array substrate includes an active layer on a substrate and a lower electrode of a capacitor on the same level as the active layer, a first insulation layer on the active layer and the lower electrode and having a first gap exposing an area of the lower electrode; a gate electrode of the TFT on the first insulation layer, and an upper electrode of the capacitor on the lower electrode and the first insulation layer, the upper electrode having a second gap that exposes the first gap and a portion of the first insulation layer; a second insulation layer disposed between the gate electrode and source electrode and drain electrodes, and not disposed on the upper electrode, in the first gap of the first insulation layer, or in the second gap of the lower electrode.
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