发明授权
- 专利标题: Programmable high-k/metal gate memory device
- 专利标题(中): 可编程高k /金属栅极存储器件
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申请号: US12355954申请日: 2009-01-19
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公开(公告)号: US08525263B2公开(公告)日: 2013-09-03
- 发明人: Roger A. Booth , Kangguo Cheng , Chandrasekharan Kothandaraman , Chengwen Pei
- 申请人: Roger A. Booth , Kangguo Cheng , Chandrasekharan Kothandaraman , Chengwen Pei
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L21/336 ; H01L29/78
摘要:
A method of fabricating a memory device is provided that may begin with forming a layered gate stack overlying a semiconductor substrate and patterning a metal electrode layer stopping on the high-k gate dielectric layer of the layered gate stack to provide a first metal gate electrode and a second metal gate electrode on the semiconductor substrate. In a next process sequence, at least one spacer is formed on the first metal gate electrode overlying a portion of the high-k gate dielectric layer, wherein a remaining portion of the high-k gate dielectric is exposed. The remaining portion of the high-k gate dielectric layer is etched to provide a first high-k gate dielectric having a portion that extends beyond a sidewall of the first metal gate electrode and a second high-k gate dielectric having an edge that is aligned to a sidewall of the second metal gate electrode.