Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12704608Application Date: 2010-02-12
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Publication No.: US08525269B2Publication Date: 2013-09-03
- Inventor: Masayuki Furumiya , Yasutaka Nakashiba
- Applicant: Masayuki Furumiya , Yasutaka Nakashiba
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-027598 20090209
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
A semiconductor device has a plurality of divided elements which are formed over a substrate, each of which containing a film having a predetermined pattern with the long-axis direction and the short-axis direction definable therein, and are arranged in a distributed manner in the same layer in the in-plane direction of the substrate, wherein the plurality of divided elements are arranged so that every adjacent divided element in a first direction has the long-axis direction thereof aligned differently from those of the neighbors, or, so that every adjacent divided element in the first direction is shifted in a second direction, which is orthogonal to the first direction, by an amount smaller than the length of the divided element in the second direction.
Public/Granted literature
- US20100200924A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-08-12
Information query
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