发明授权
- 专利标题： Non-volatile memory device
- 专利标题（中）： 非易失性存储器件
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申请号： US13177873申请日： 2011-07-07
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公开(公告)号： US08526231B2公开(公告)日： 2013-09-03
- 发明人: Yong-Kyu Lee , Tea-Kwang Yu , Bo-Young Seo
- 申请人： Yong-Kyu Lee , Tea-Kwang Yu , Bo-Young Seo
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0097831 20101007
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
A non-volatile memory device includes a first sector including a first sector selection transistor and a first plurality of pages connected to the first sector selection transistor, and a second sector including a second sector selection transistor and a second plurality of pages connected to the second sector selection transistor. Each of the first and second plurality of pages includes a memory transistor and a selection transistor, and a number of pages in the first plurality of pages is greater than a number of pages in the second plurality of pages.
公开/授权文献
- US20120087189A1 Non-Volatile Memory Device 公开/授权日：2012-04-12
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