Invention Grant
- Patent Title: Integrated circuit memory power supply
- Patent Title (中): 集成电路内存电源
-
Application No.: US12379821Application Date: 2009-03-02
-
Publication No.: US08526261B2Publication Date: 2013-09-03
- Inventor: Gregory Kengho Chen , Dennis Michael Sylvester , David Theodore Blaauw
- Applicant: Gregory Kengho Chen , Dennis Michael Sylvester , David Theodore Blaauw
- Applicant Address: US MI Ann Arbor
- Assignee: The Regents of the University of Michigan
- Current Assignee: The Regents of the University of Michigan
- Current Assignee Address: US MI Ann Arbor
- Agency: Nixon & Vanderhye P.C.
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An integrated circuit memory 2 is provided with an array of memory cells 4 and power supply circuitry 10, 12. Detected operating errors in malfunctioning memory cells 14 are identified using a built-in-self-test controller 34. The power supply circuitry 10, 12 is then configured to alter the voltage supply to the malfunctioning memory cells 14 in an attempt to correct their operation. The voltage supply of the row containing the malfunctioning memory cell and the column containing the malfunctioning memory cell may both be altered. The voltage alteration may be an increase or a decrease in voltage supply depending upon the nature of the malfunction detected.
Public/Granted literature
- US20100220538A1 Integrated circuit memory power supply Public/Granted day:2010-09-02
Information query