Invention Grant
- Patent Title: Multi-layered memory devices
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Application No.: US12929355Application Date: 2011-01-19
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Publication No.: US08526263B2Publication Date: 2013-09-03
- Inventor: Jaechul Park , Keewon Kwon , Youngsoo Park , Seunghoon Lee , Seungeon Ahn
- Applicant: Jaechul Park , Keewon Kwon , Youngsoo Park , Seunghoon Lee , Seungeon Ahn
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2007-0092651 20070912; KR10-2008-0047092 20080521
- Main IPC: G11C8/00
- IPC: G11C8/00
Abstract:
A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.
Public/Granted literature
- US20110116297A1 Multi-layered memory devices Public/Granted day:2011-05-19
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