Invention Grant
US08526708B2 Measurement of critical dimensions of semiconductor wafers 有权
测量半导体晶圆的临界尺寸

  • Patent Title: Measurement of critical dimensions of semiconductor wafers
  • Patent Title (中): 测量半导体晶圆的临界尺寸
  • Application No.: US12526445
    Application Date: 2007-08-02
  • Publication No.: US08526708B2
    Publication Date: 2013-09-03
  • Inventor: Onder Anilturk
  • Applicant: Onder Anilturk
  • Applicant Address: US TX Austin
  • Assignee: Freescale Semiconductor, Inc.
  • Current Assignee: Freescale Semiconductor, Inc.
  • Current Assignee Address: US TX Austin
  • International Application: PCT/IB2007/051451 WO 20070802
  • International Announcement: WO2008/096211 WO 20080814
  • Main IPC: G06K9/00
  • IPC: G06K9/00 G01B5/28
Measurement of critical dimensions of semiconductor wafers
Abstract:
A semiconductor wafer critical dimension measurement method comprising receiving an image of a site of the semiconductor wafer comprising a plurality of features, processing the image to measure at least one critical dimension of at least some of the features, analyzing the critical dimension of each feature and determining the feature to be a non-defective feature or a defective feature, and using the critical dimension of at least some of any non-defective features as a measure of the critical dimension of features of the semiconductor wafer.
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