发明授权
- 专利标题: Methods and systems for lithography process window simulation
- 专利标题(中): 光刻工艺窗口模拟方法与系统
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申请号: US13494773申请日: 2012-06-12
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公开(公告)号: US08527255B2公开(公告)日: 2013-09-03
- 发明人: Jun Ye , Yu Cao , Hanying Feng
- 申请人: Jun Ye , Yu Cao , Hanying Feng
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.
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