Invention Grant
- Patent Title: Method for producing hexagonal boron nitride single crystals
- Patent Title (中): 生产六方氮化硼单晶的方法
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Application No.: US13561695Application Date: 2012-07-30
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Publication No.: US08529696B2Publication Date: 2013-09-10
- Inventor: Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
- Applicant: Kenji Watanabe , Takashi Taniguchi , Satoshi Koizumi , Hisao Kanda , Masayuki Katagiri , Takatoshi Yamada , Nesladek Milos
- Applicant Address: JP Tsukuba-Shi
- Assignee: National Institute for Materials Science
- Current Assignee: National Institute for Materials Science
- Current Assignee Address: JP Tsukuba-Shi
- Agent Manabu Kanesaka
- Priority: JP2003-388467 20031118; JP2004-035501 20040212; JP2004-260480 20040908
- Main IPC: C30B9/00
- IPC: C30B9/00
Abstract:
A method for producing hexagonal boron nitride single crystals including mixing boron nitride crystals with a solvent thereby obtaining a mixture, heating and melting the mixture under high-temperature and high-pressure thereby obtaining a melted mixture, and recrystallizing the melted mixture thereby producing hexagonal boron nitride single crystals, wherein the solvent is boronitride of alkaline earth metal, or boronitride of alkali metal and the boronitride of alkaline earth metal.
Public/Granted literature
- US20120291695A1 METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE SINGLE CRYSTALS Public/Granted day:2012-11-22
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