Invention Grant
- Patent Title: Honeycomb structure
- Patent Title (中): 蜂窝结构
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Application No.: US13432322Application Date: 2012-03-28
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Publication No.: US08530030B2Publication Date: 2013-09-10
- Inventor: Yasushi Noguchi , Atsushi Kaneda , Takayuki Inoue
- Applicant: Yasushi Noguchi , Atsushi Kaneda , Takayuki Inoue
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2009-222538 20090928
- Main IPC: F01N3/10
- IPC: F01N3/10 ; F01N3/24 ; B01D53/94

Abstract:
There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.
Public/Granted literature
- US20120183725A1 HONEYCOMB STRUCTURE Public/Granted day:2012-07-19
Information query
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