发明授权
US08530841B2 Infrared sensor, electronic device, and manufacturing method of infrared sensor
有权
红外线传感器，电子设备及红外线传感器的制造方法
- 专利标题： Infrared sensor, electronic device, and manufacturing method of infrared sensor
- 专利标题（中）： 红外线传感器，电子设备及红外线传感器的制造方法
-
申请号： US13256704申请日： 2010-04-05
-
公开(公告)号： US08530841B2公开(公告)日： 2013-09-10
- 发明人: Masatake Takahashi , Yasuhiro Sasaki , Hiroshi Sakai
- 申请人： Masatake Takahashi , Yasuhiro Sasaki , Hiroshi Sakai
- 申请人地址： JP Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-120127 20090518
- 国际申请： PCT/JP2010/002494 WO 20100405
- 国际公布： WO2010/134255 WO 20101125
- 主分类号： H01L37/00
- IPC分类号： H01L37/00 ; G01J5/00
摘要：
The present invention aims to reduce a size and improve quality of an infrared sensor. An infrared sensor (203) according to the present invention includes a substrate (202) and an infrared detection element (201). A principal surface of the substrate (202) includes a convex shape. The infrared detection element (201) is formed over the principal surface including the convex shape of the substrate (202). Further, as for the infrared detection element (201), an entire light-receiving surface includes a planar shape. Then, it can be the small-sized infrared sensor (203) with improved quality.
公开/授权文献
信息查询
IPC分类:
