发明授权
US08530964B2 Semiconductor device including first and second semiconductor elements
有权
包括第一和第二半导体元件的半导体器件
- 专利标题: Semiconductor device including first and second semiconductor elements
- 专利标题(中): 包括第一和第二半导体元件的半导体器件
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申请号: US13314637申请日: 2011-12-08
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公开(公告)号: US08530964B2公开(公告)日: 2013-09-10
- 发明人: Franz Hirler , Ulrich Glaser , Christian Lenzhofer
- 申请人: Franz Hirler , Ulrich Glaser , Christian Lenzhofer
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A semiconductor device includes a first semiconductor element including a first pn junction between a first terminal and a second terminal. The semiconductor device further includes a semiconductor element including a second pn junction between a third terminal and a fourth terminal. The semiconductor element further includes a semiconductor body including the first semiconductor element and the second semiconductor element monolithically integrated. The first and third terminals are electrically coupled to a first device terminal. The second and fourth terminals are electrically coupled to a second device terminal. A temperature coefficient α1 of a breakdown voltage Vbr1 of the first pn junction and a temperature coefficient α2 of a breakdown voltage Vbr2 of the second pn junction have a same algebraic sign and satisfy 0.6×α1