Invention Grant
- Patent Title: High-impedance MEMS switch
- Patent Title (中): 高阻抗MEMS开关
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Application No.: US13087625Application Date: 2011-04-15
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Publication No.: US08531192B2Publication Date: 2013-09-10
- Inventor: Matthew A. Zeleznik
- Applicant: Matthew A. Zeleznik
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Michael Best & Friedrich LLP
- Main IPC: G01R27/26
- IPC: G01R27/26

Abstract:
The MEMS switch has a high-impedance state and a low-impedance state for biasing a capacitive sensor, and includes an actuation bias terminal, a sense bias terminal, a switch control terminal, a sense node terminal, and a spring. The actuation bias terminal and the sense bias terminal reside in a released region of the switch. The sense bias terminal is physically coupled to the actuation bias terminal by a dielectric which electrically isolates the sense bias terminal from the actuation bias terminal. The switch control terminal is separated from the sense bias terminal by a first air gap, and the sense node terminal is separated from the sense bias terminal by a second air gap. The spring supports the actuation bias terminal, the sense bias terminal, and the dielectric.
Public/Granted literature
- US20120262192A1 HIGH-IMPEDANCE MEMS SWITCH Public/Granted day:2012-10-18
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