发明授权
- 专利标题: Bias controlling apparatus
- 专利标题(中): 偏压控制装置
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申请号: US13370227申请日: 2012-02-09
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公开(公告)号: US08531243B2公开(公告)日: 2013-09-10
- 发明人: Hyun Hwan Yoo , Yoo Hwan Kim , Yoo Sam Na
- 申请人: Hyun Hwan Yoo , Yoo Hwan Kim , Yoo Sam Na
- 申请人地址: KR
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Blakely Sokoloff Taylor & Zafman
- 优先权: KR10-2011-0099225 20110929
- 主分类号: H03F3/04
- IPC分类号: H03F3/04
摘要:
The present invention includes: a temperature compensation circuit for generating a digital signal corresponding to a temperature of a transistor and outputting a compensation bias current obtained by adding a control current to a reference bias current or by subtracting the control signal from the reference bias current using the generated digital signal; a characteristics compensation circuit for detecting a characteristics error of a mirror transistor connected to the transistor in parallel and for outputting a compensation signal to compensate the characteristics error; and a bias compensation circuit for compensating a bias power applied to the transistor using the compensation bias current and the compensation signal to output the compensated bias power. The present invention is capable of improving the performance of the transistor.
公开/授权文献
- US20130082777A1 BIAS CONTROLLING APPARATUS 公开/授权日:2013-04-04