发明授权
- 专利标题： Nonvolatile memories and reconfigurable circuits
- 专利标题（中）： 非易失性存储器和可重新配置电路
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申请号： US13213871申请日： 2011-08-19
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公开(公告)号： US08531866B2公开(公告)日： 2013-09-10
- 发明人: Kazutaka Ikegami , Atsuhiro Kinoshita , Daisuke Hagishima
- 申请人： Kazutaka Ikegami , Atsuhiro Kinoshita , Daisuke Hagishima
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-68124 20090319
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
A nonvolatile memory according to an embodiment includes at least one memory cell including: a variable resistance memory comprising one end connected to a first terminal, and the other end connected to a second terminal, a drive voltage being applied to the first terminal; and a diode comprising a cathode connected to the second terminal, and an anode connected to a third terminal, a ground potential being applied to the third terminal. An output of the memory cell is output from the second terminal, the output of the memory cell depends on a resistance state of the variable resistance memory.
公开/授权文献
- US20120026779A1 NONVOLATILE MEMORIES AND RECONFIGURABLE CIRCUITS 公开/授权日：2012-02-02
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