发明授权
- 专利标题： Sensing circuit
- 专利标题（中）： 感应电路
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申请号： US13173795申请日： 2011-06-30
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公开(公告)号： US08531902B2公开(公告)日： 2013-09-10
- 发明人: Seong-Ook Jung , Jisu Kim , Kyungho Ryu , Jung Pill Kim , Seung H. Kang
- 申请人： Seong-Ook Jung , Jisu Kim , Kyungho Ryu , Jung Pill Kim , Seung H. Kang
- 申请人地址： US CA San Diego KR Seoul
- 专利权人： QUALCOMM Incorporated,Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人： QUALCOMM Incorporated,Industry-Academic Cooperation Foundation, Yonsei University
- 当前专利权人地址： US CA San Diego KR Seoul
- 代理商 Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- 主分类号： G11C7/02
- IPC分类号： G11C7/02
摘要：
A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of a not-AND (NAND) circuit.
公开/授权文献
- US20130003447A1 SENSING CIRCUIT 公开/授权日：2013-01-03